Origin of the Raman mode at 379 cm−1 observed in ZnO thin films grown on sapphire
Identifieur interne : 000323 ( Main/Exploration ); précédent : 000322; suivant : 000324Origin of the Raman mode at 379 cm−1 observed in ZnO thin films grown on sapphire
Auteurs : A. Souissi [Tunisie] ; A. Marzouki [Tunisie, France] ; A. Sayari [Tunisie] ; V. Sallet [France] ; A. Lusson [France] ; M. Oueslati [Tunisie]Source :
- Journal of Raman Spectroscopy [ 0377-0486 ] ; 2011-07.
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Abstract
In this work, we present a detailed Raman scattering study to clarify the origin of the mode at 379 cm−1 which is observed in Raman spectra of the ZnO films grown on c‐sapphire substrates and generally attributed to the A1‐transverse optical (A1‐TO) mode of ZnO. The studied ZnO films were deposited by metal‐organic chemical vapor deposition on c‐sapphire and (0001) ZnO substrates. In the z(−,−)z̄ backscattering configuration, the A1‐TO mode is forbidden, while the 379 cm−1 peak is still observed in the as‐deposited film grown on sapphire substrate. However, this mode is not observed in Raman spectra of the as deposited film grown on ZnO substrate. We suggest that the peak at 379 cm−1 is the E1g mode of the sapphire substrate which is allowed in z(−,−)z̄ backscattering configuration. The effects of annealing, the substrate and the collection cross‐section on Raman active modes were analyzed. Copyright © 2011 John Wiley & Sons, Ltd.
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DOI: 10.1002/jrs.2887
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The studied ZnO films were deposited by metal‐organic chemical vapor deposition on c‐sapphire and (0001) ZnO substrates. In the z(−,−)z̄ backscattering configuration, the A1‐TO mode is forbidden, while the 379 cm−1 peak is still observed in the as‐deposited film grown on sapphire substrate. However, this mode is not observed in Raman spectra of the as deposited film grown on ZnO substrate. We suggest that the peak at 379 cm−1 is the E1g mode of the sapphire substrate which is allowed in z(−,−)z̄ backscattering configuration. The effects of annealing, the substrate and the collection cross‐section on Raman active modes were analyzed. Copyright © 2011 John Wiley & Sons, Ltd.</div></front></TEI><affiliations><list><country><li>France</li><li>Tunisie</li></country><region><li>Gouvernorat de Tunis</li><li>Île-de-France</li></region><settlement><li>Meudon</li><li>Tunis</li></settlement></list><tree><country name="Tunisie"><region name="Gouvernorat de Tunis"><name sortKey="Souissi, A" sort="Souissi, A" uniqKey="Souissi A" first="A." last="Souissi">A. Souissi</name></region><name sortKey="Marzouki, A" sort="Marzouki, A" uniqKey="Marzouki A" first="A." last="Marzouki">A. Marzouki</name><name sortKey="Oueslati, M" sort="Oueslati, M" uniqKey="Oueslati M" first="M." last="Oueslati">M. Oueslati</name><name sortKey="Sayari, A" sort="Sayari, A" uniqKey="Sayari A" first="A." last="Sayari">A. Sayari</name><name sortKey="Souissi, A" sort="Souissi, A" uniqKey="Souissi A" first="A." last="Souissi">A. Souissi</name></country><country name="France"><region name="Île-de-France"><name sortKey="Marzouki, A" sort="Marzouki, A" uniqKey="Marzouki A" first="A." last="Marzouki">A. Marzouki</name></region><name sortKey="Lusson, A" sort="Lusson, A" uniqKey="Lusson A" first="A." last="Lusson">A. Lusson</name><name sortKey="Sallet, V" sort="Sallet, V" uniqKey="Sallet V" first="V." last="Sallet">V. Sallet</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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